| 摘要 |
PURPOSE:To enable to form an extremely fine pattern having a large aspect ratio with favorable precision and favorable reproducibility by a method wherein a thin film figure having the prescribed shape is formed on a substrate, a growth layer thin film different from the first thin film is formed on the whole surface of the substrate, and after the growth layer thin film on the substrate and on the thin film is etched to be removed by the uniform thickness, the first thin film is removed. CONSTITUTION:A resist pattern 6 is formed on a substrate 1. Then, a growth layer thin film 7 is formed using the plasma CVD method. Because the plasma CVD method has a favorable step coverage property, a thin film layer of nearly the same thickness with the plane part is also grown easily on the side wall part of the resist 6. Moreover, because low temperature growth can be performed, the shape of the resist 6 is not damaged. After then, an etching method having intense anisotropy, a reactive ion etching method for example, is used to etch the whole surface, the growth layer thin film at the part other than the side wall part of the resist pattern 6 is removed, and the growth layer thin film 8 is formed only on the side wall part of the resist pattern 6. Finally, by removing the resist pattern 6, the fine growth layer thin film pattern 8 is formed. |
