| 摘要 |
PURPOSE:To obtain a GaAs FET having a high breakdown voltage, by decreasing the carrier concentration only at the bottom part of a recess part in the surface of an operating layer, which forms a gate electrode. CONSTITUTION:A GaAs FET comprises a semiinsulating GaAs substrate 1, a highly resistive buffer layer 2, an operating layer 3, a source electrode 4, a drain electrode 5, and a gate electrode 6. When the carrier concentration of only a part, which is separated from the bottom of the recess part of the operating layer, wherein the electrode 6 is formed, by a specified depth, is decreased, a breakdown voltage can be made high without increasing resistance. The profile of the carrier concentration can be formed by using a molecular beam epitaxy method. |
