发明名称 PREPARATION OF SILICON CARBIDE
摘要 PURPOSE:In thermal decomposition of a silane compound by plasma flame in a gaseous phase, to prepare finely divided particles of beta-type silicon carbide in high reactivity in high formation rate, by introducing a raw material gas into the central part of the plamsa flame. CONSTITUTION:(A) A gas of an organosilane shown by the formula I [R is H or monofunctional hydrocarbon group (at least one is monofunctional hydrocarbon group); n is 1-4], and/or (B) a mixed gas of a silane shown by the formula II(m is 0-4) and a volatile hydrocarbon compound is used as a raw material gas. Namely, argon is introduced from the plasma inlet pipe 2 to the reaction pipe 5, high-frequency power (about 0.5-10MHz, about 1-100kW) is applied to the high-frequency work coil 6 to generate the plasma flame 9. The raw material gas is introduced from the pipe 1 to the central part of the plasma flame 9 (flow velocity: about 1-4m/sec.), and finely divided particles of silicon carbide are dropped into the particle collecting part 7.
申请公布号 JPS59131509(A) 申请公布日期 1984.07.28
申请号 JP19830005761 申请日期 1983.01.17
申请人 SHINETSU KAGAKU KOGYO KK 发明人 OKAMOTO HARUO;YAMADA MOTOYUKI
分类号 C01B31/36 主分类号 C01B31/36
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