| 摘要 |
<p>By depositing metal in an inert gas at a pressure of substantially 30 millitorr on an insulating substrate a metal layer is produced which is conducting across its thickness but substantially insulating in transverse directions. If a second metal layer is deposited according to the method of European patent application 8 330 1676.9 partially overlapping this first layer, the overlap portions are similarly insulating in transverse directions, while the non-overlapping portions are conducting. This arrangement has applications to the manufacture, inter alia, of Josephson junction devices. …<??>Figure 6 is a drawing of a scanning electron micrograph of such a composite layer. In the non-overlapping portion of the metal layer comprises a plurality of micro-crystals 24, physically and electrically connected to each other, and forming a homogeneous metal layer. In the overlapping portion the micro-crystals form islands 25, separated by insulating voids 26 which extend vertically completely through the layer, causing it to be transversely non-conducting. …<??>In the examples given in the specification the metals used are lead and lead alloys, and the inert gas is argon. Copper and aluminium are also mentioned as suitable metals.</p> |
