| 摘要 |
PURPOSE:To reduce the degree of roughness on the surface of a single crystal Si film on which an insulating film and a selectively provided epitaxial film are coexisted by a method wherein a machine polishing method of a very slow speed and of an excellent controllability is used. CONSTITUTION:A perpendicular-shaped insulating film 2 of 2mum in height and 0.5mum or thereabout in width is provided on a single crystal Si substrate, and a single crystal epitaxial film 3 is formed using SiH2Cl2 and HCl gas as raw material. At this time, the roughness of 4,000Angstrom or thereabout is generated on the surface of the film 3. A machine polishing work is performed by applying pressure of 110g/cm<2> at the low speed of 100Angstrom /min using a weak alkali solution wherein pulverized silica powder of 100Angstrom or less in diameter is suspended. As a result, the roughnened part on the surface of the film 3 is removed, and the plane and warpless surface of 100Angstrom or below can be obtained within the substrate. A high density IC can be formed using this substrate. |
