| 摘要 |
PURPOSE:To transfer excellently magnetic bubbles by implanting hydrogen ions at least once on a shallow side of a magnetic medium and also implanting ions which has larger mass than the hydrogen ions and small dispersion due to ion implantation in the deepest part, and thus forming a bubble magnetic domain transfer path. CONSTITUTION:Ions of O2, Ne, He, etc., are used as ions having small dispersion due to implantation for a deep part, and hydrogen ions are implanted in a shallower part to form an ion implantation type magnetic bubble element which has an ion-implanted layer of multiple structure. An ion implanted layer having a steep distortion profile is formed with regard to a <=1mum thickness magnetic garnet layer used for a high-density ion implantation type magnetic bubble memory element. When this ion-implanted layer is used, bubbles of <=1mum in diameter are transferred by an ion-implanted transfer pattern over a wide operation range. |
