| 摘要 |
PURPOSE:To reduce leakage current ICEO of a semiconductor device without causing the channel preventing effect by forming a photoreceiving element and electrode wirings formed along a base junction on an insulating film of the base junction of the element and connected to he emitter electrode of the element. CONSTITUTION:Electrode (aluminum) wirings 61 formed along a base junction on an insulating film 4 of the base junction of a photoreceiving element 11 and connected to the emitter electrode of the element 11 are formed. In this case, since the base junction is formed annularly as seen planely, the wirings 61 corresponding thereto are also annular. Since a bias voltage is always applied to the emitter via the bias between the collector and the emitter, the electrode 61 can constantly perform the channel preventing effect. As a negative bias voltage is applied to an emitter layer 3, a forward bias voltage is applied between the emitter and the base at this time so that the base layer 2 and the wirings 61 become substantially equal voltage, no carrier which causes the leakage current is not induced in the layer 2, thereby preventing the production of the leakage current ICEO. |
