| 摘要 |
PURPOSE:To simplify the steps of manufacturing a semiconductor single phase full-wave rectifier and to reduce the cost by punching a metal plate to integrally form a plurality of strips formed of a substrate supported to a frame and terminals and positively utilizing the frame as a waste in the steps. CONSTITUTION:Two strips 7 which are formed of a substrate 5 of substrantially square shape and terminals 6 by a method such as punching a metal plate, and two strips 9 which are formed of an L-shaped substrate 8 and terminals 6 are formed integrally with a frame 10, and semiconductor elements 11 are carried on both ends of the substrate 8. The elements on the adjacent different substrates via L-shaped conducting means 12 are connected so as to become the same voltage as the substrate 5 disposed between the elements. The terminals 6 side are bent substantially perpendicularly together with the frame 10 along a boundary A-A', cut to remove the frame 10 of unnecessary part, and a single phase full-wave unit rectifier is formed. |
