| 摘要 |
PURPOSE:To prevent the deterioration of characteristics of a transparent conductive film on a substrate and a diffusion to an amorphous semiconductor layer by using unsaturated hydrocarbon such as acetylene, which can be decomposed by low discharge energy, as carbon source. CONSTITUTION:When a semiconductor device as a photosensor is manufactured, the substrate 1 consisting of a transparent insulating material such as glass is coated with the transparent conductive film 2 made of indium oxide tin, tin oxide or the like, acetylene gas and diborane for a P layer 3 and phosphine for an N layer 5 are mixed with a silane or silane derivative gas as doping materials, and introduced into a glow discharge decomposing device, glow discharge is generated, the introduced gases are decomposed and reacted, and the amorphous semiconductor layer 6 of P-I-N structure is formed in succession. Optical forbidden band width and optical conductivity shift to the low discharge power density side, and the carbon added amorphous silicon film having aimed physical properties is obtained by low discharge energy. |
