| 摘要 |
PURPOSE:To obtain a semiconductor light emitting element which has long lifetime by providing such that an impedance between a metal film and a semiconductor layer underside the metal is larger than the impedance between an ohmic electrode and the semiconductor layer contacted with the electrode when a voltage for emitting a light from a light emitting unit is applied to the ohmic electrode. CONSTITUTION:A P type region 23 is selectively formed by Zn diffusion except a circular region 22 in the vicinity of the surface of an N type InP substrate 21. An N type InP layer 24, a P type InGaAsP active layer 25, a P type InP layer 26 are sequentially formed on the substrate 21. After an SiO2 film is formed by sputtering on the surface of the layer 26, a pattern is formed by photoresist, an SiO2 film 27 remains circularly to match to the region 22, and the other is removed. Then, metal film 28 which is formed of Au and Zn is formed by depositing on the surfaces of the layers 26, 27. Subsequently, a P type ohmic electrode 29 is formed by heat treating in hydrogen or nitrogen atmosphere. Subsequently, after the N type InP substrate 21 is polished, an AuGeNi film is formed by depositing on the surface of the substrate 21. |
