| 摘要 |
PURPOSE:To lower contact resistance between polysilicon and contact metal through enhancement of impurity concentration at the surface of polysilicon film by simultaneously diffusing impurity during thermal processing of polysilicon. CONSTITUTION:A phosphor or boron impurity doped polysilicon film is formed by the vapor growth method on a silicon wafer forming junction. Such silicon wafer and circular phosphor or boron impurity diffusing agent, for example, are alternately arranged on a quartz boat and are then inserted into a quartz tube which is already heated up to a specified temperature. The activated phosphor or boron impurity is generated from phosphor or boron impurity diffusion agent arranged between silicon wafers, it is diffused to said polysilicon film formed by the vapor growth and an impurity which is also previously doped during vapor growth is activated. When impurity is simultaneously diffused during heat treatment of polysilicon, the activated impurity concentration becomes very high within a polysilicon film and a resistance value of polysilicon film is drastically reduced. |
