| 摘要 |
<p>PURPOSE:To obtain the nondestructive type reading system 1-transistor type nonvolatile semiconductor memory device, writing voltage thereof is low, a DELTAVth margin thereof is large, operation thereof is stable and which can be rewritten electrically. CONSTITUTION:A layer consisting of silicon nitride (Si3N4) is formed on a P type silicon (psi) substrate 21, and removed through etching, and a tantalum oxide (Ta2O5) layer 29 is formed. A polycrystalline silicon layer is formed on said tantalum oxide (Ta2O5) 29 by using a chemical vapor deposition growth method, and removed selectively, and a gate electrode 26 consisting of polycrystalline silicon and a tantalum oxide layer 29' as a second insulator layer are formed. Ions are implanted, and a ground wire diffusion layer 22 and a bit wire diffusion layer 23 are formed. The tantalum oxide (Ta2O5) layer 29' also functions as an introducing path for oxidation seeds in a silicon region being in contact with tantalum oxide to cause oxidation, and a third insulator layer 30' and a first insulator layer 31' consisting of silicon dioxide (SiO2) are formed.</p> |
