发明名称 Method of varistor capacitance reduction by boron diffusion
摘要 Diffusing boron-containing glass, such as bismuth borosilicate glass, into conventional sintered zinc oxide based varistor material reduces varistor material intrinsic capacitance. In the method, a layer of glass powder is screen-printed, painted, or otherwise applied to the varistor material surface. Upon firing, a portion of the glass diffuses into the material, while the remainder creates an insulating layer on the varistor material surface which may be removed by grinding. The varistor material may then be annealed to restore varistor electrical properties which may have been degraded by mechanical damage caused by the grinding. Device electrodes are attached by conventional means.
申请公布号 US4460623(A) 申请公布日期 1984.07.17
申请号 US19810317695 申请日期 1981.11.02
申请人 GENERAL ELECTRIC COMPANY 发明人 LEVINSON, LIONEL M.
分类号 H01C7/10;C04B35/453;H01C7/102;H01C7/112;(IPC1-7):H01C7/12;H01C17/30 主分类号 H01C7/10
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