| 摘要 |
PURPOSE:To prevent the contamination of a material to be processed during dry etching and realize the fine work of the material to be processed by etching using any one kind or more of gasses having no carbon atoms such as silicon tetrafluoride, silicon tetrachloride, and halogen, or using the mixed gas of any kind or more of said gasses with an inert gas. CONSTITUTION:In order to form a deep groove in an Si substrate with good controllability, it is required that the etching speed for Si is as fast as possible as compared with that for SiO2 serving as a mask, and the formation of the deep groove is enabled by using the mixed gas of SiF4 with Cl2 and using quartz for a cathode. In the case of etching a multi layer film composed of the Si and the SiO2 at the same time, it is required that the etching speeds for the Si and SiO2 have difference as little as possible, and the etching of the multilayer film with good controllability is enabled by using the mixed gas of the SiF4 and the Cl2 and using Si for a cathode. Since the etching gas does not have carbon atoms, an organic film containing carbon atoms as the main constituent can be prevented from deposit on the surface of the material to be processed, and the contamination of a heavy metal is prevented by constituting an anode and the side wall of a reaction chamber by means of the same material as a cathode coating material, or being covered therewith. |
