| 摘要 |
PURPOSE:To bury a conductive material in a fine through hole without causing a disconnection or a cavity making a multilayer wiring flat by a method wherein the merits of Al evaporation and deposite by sputtering are respectively utilized. CONSTITUTION:A through hole is formed in a PSG film 2 on a silicon substrate 1 and an Al layer 5b is formed to bury a half of the through hole by evaporation. Another Al layer 5c is formed by burying the remaining half of the through hole by sputtering. Then a resist film 8 with double width of the through hole is formed by means of coating the overall surface with possitive type resist and patterning. When an Al wiring layer 5 outside the dotted line is removed by completely anisotropic dry etching, an Al wiring layers 5d are left under the resist film 8. The wiring layers 5d are removed by side etching. At this time, the wiring layers 5d only are completely removed having no influence upon the wiring layer 5 in the through hole at all since the Al layer is discontinuous at step difference 2a. Finally the resist film 8 may be removed to form a wiring layer 5f by means of sputtering. |
