| 摘要 |
A lateral DMOS includes an intermediate semiconductor layer (16) of the same conductivity type as the channel region (20) which extends laterally from the channel region to beneath the drain contact region (24) of the device. This intermediate semiconductor layer (16) substantially improves the punchthrough and avalanche breakdown characteristics of the device, thus permitting operation in the source-follower mode, while also providing a compact structure which features a relatively low normalized "on" resistance.
|
