| 摘要 |
PURPOSE:To enhance the grade of a single crystal silicon formed on a single crystal insulator by once dissolving a single crystal silicon layer formed on a single crystal insulator, and then solidifying and single-crystallizing it again. CONSTITUTION:After a single crystal layer 2, for example, consisting of magnesia spinnel is formed on a silicon single crystal substrate 1, a silicon (Si) single crystal layer 3 is formed thereon by the chemical vapor epitaxial growth method. The surface of silicon single crystal layer 3 is scanned by the laser beam spot and thereby the crystal is sequentially melted. Namely, only the region 4 indicated by the hatched portion dissolves by the irradiation of laser beam. Thereafter the substrate 1 is cooled naturally and the dissolved region 4 is solidified. Thereby, recrytallization of region 4 progresses with the region in contact with the region 4 of silicon layer working as the nucleus of growth. As a result, a high grade silicon single crystal can be obtained. |
