发明名称 |
Field effect transistor |
摘要 |
A dual gate Schottky barrier gate GaAs FET with improved cross-modulation characteristics when used in a UHF gain controlling tuner, having a value of 40 mA or smaller of a drain to source saturation current, the improvement of the FET is that length of a second gate which is disposed between a first gate and a drain is 1.5 mu m or longer.
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申请公布号 |
US4459556(A) |
申请公布日期 |
1984.07.10 |
申请号 |
US19830539634 |
申请日期 |
1983.10.07 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NANBU, SHUTARO;NAGASHIMA, ATSUSHI;KANO, GOTA |
分类号 |
H01L29/80;H01L29/812;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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