| 摘要 |
PURPOSE:To improve reliability of semiconductor device by forming the P-SiN film having excellent mechanical strength and moisture proof characteristic as the final passivation film. CONSTITUTION:A field oxide film 3, an aluminum wiring 5, a PSG film 6, a gate insulating film 8, a polysilicon gate 9, a P-SiN film 7 are formed on a P type silicon semiconductor substrate 1. A silicon nitride film 14 formed by the CVD method between the gate 9 and wiring 5 as an insulating film is used as a part of the insulating film. Since the film 14 is unstable electrically, it is pinched by the electrically stable PSG films 13, 15 in order to prevent short- circuit between the electrode 9 and wiring 5. |
