| 摘要 |
PURPOSE:To block a current, which flows into the outside of a mesa region almost completely, by utilizing the increasing effect of a crystal growing speed in a grooves, providing a semiconductor layer in the vicinity of an active layer with good reproducibility, and making it possible to avoid the lamination of the semiconductor layer on the upper part of the mesa region. CONSTITUTION:On an N type GaAs substrate 1, an N type Al0.4Ga0.6As layer 2, an Al0.05Ga0.95As layer 3, which is to become an active layer, a P type Al0.4Ga0.6As-layer 4, and a P type GaAs layer 5 are formed. Mesa etching is performed so as to reach the substrate 1, and a stripe shaped mesa region having an active region is formed. Two grooves reaching the substrate 1 are provided. A P-type Al0.35Ga0.65As layer 6, an N type Al0.35Ga0.65As layer 7, and a P-type Al0.35Ga0.65As layer 12 are sequentially formed so as to surround the side surface of the mesa. Then the crystal growing speed in the grooves is expedited, and the crystal is not laminated on the upper part of the mesa. The crystal can be grown only on the side surface. Thereafter, a P-type GaAs layer 13 is formed on the entire surface of the crystal including the upper part of the mesa. Then, a P-type impurity diffused layer 8, a P-type ohmic electrode 10, and an N-type ohmic electrode 11 are formed. |
