| 摘要 |
PURPOSE:To form a fine wiring pattern by a method wherein a metal layer is formed on a semiconductor substrate and an oxide film pattern is formed on the metal layer surface by a focused oxygen ion beam and the oxide film pattern is processed by dry etching. CONSTITUTION:Aluminum is deposited on a silicon substrate 1 and an aluminum metal layer 2 is formed. An aluminum oxide film pattern 4 is formed on the surface of the metal layer 2 by selective patterning by an oxygen ion beam 3. The surface of the metal layer 2 and the pattern 4 is processed by CCl4 gas plasma etching. Then, micro-fine wiring pattern can easily be obtained without using resist. |
