发明名称 BASE CONTROL CIRCUIT FOR POWER TRANSISTOR
摘要 PURPOSE:To increase the du/dt dielectric strength of a power transistor (TR) and to prevent a reverse TR operation by applying a reverse potential between the base and emitter of the power TR. CONSTITUTION:An ON-circuit is constituted to flow an ON-current and the power TR12 is turned on and held on. Then, an OFF-circuit is composed of a capacitor 8, a TR7, the emitter and base of the TR12, and a capacitor 9 to flow an OFF-current, and the TR12 is turned on. At this point of time, the capacity of the capacitor 9 is far larger than that of a capacitor 8, so the capacitor 8 is discharged completely, but the capacitor 9 is hardly discharged. Then, the reverse bias circuit consisting of the capacitor 9, resistance 10, TR7, and the base and emitter of the TR12 applies the discharging potential of the capacitor 9 between the emitter and base of the TR12 as a reverse bias voltage.
申请公布号 JPS59116824(A) 申请公布日期 1984.07.05
申请号 JP19820226049 申请日期 1982.12.24
申请人 HITACHI SEISAKUSHO KK 发明人 FUJII HIROSHI;ISHIBASHI AKIRA;NANTOU KENJI
分类号 H02M1/06;H02M3/155;H02M3/28 主分类号 H02M1/06
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