| 摘要 |
PURPOSE:To improve the photoelectric conversion efficiency by continuously reducing the density of B of an I type layer from the boundary of P type layer to the surface of an N type layer as prescribed when forming a P-I-N junction with a non-single crystal layer which mainly contains Si added with H or halogen element. CONSTITUTION:A transparent electrode 2 is formed on a glass plate 1, non-single crystal Si layers 3-5 are superposed by a plasma CVD method to form a P- I-N junction, and a transparent electrode 6, and a reflecting electrode 6' are formed. When forming an I type layer 4, B2H4 is added in the amount of 0- 5ppm to an SinH2n+1, the density of B is continuously reduced at the P type layer side from 2X10<15>-2X10<17>cm<-3>, set to 0-1X10<15>cm<-3> at the N type layer side, and the density of B is reduced to 1/5 or less. At this time, depletion layer 55 of P-N junction and a depletion layer 57 of N-I junction are continued in the layer 4, and a drift field having no flat part is formed in an energy band. In other words, the drift field can be effectively formed except the neutralization of N type of the I type layer, thereby improving the photoelectric conversion efficiency. |
