Method of making single-level polysilicon dynamic memory array

摘要

A dynamic read/write memory cell of the one transistor type is made by a single-level polysilicon process in which the word address lines and the bias lines for the capacitors are formed by metal strips. The gates of the access transistors and the capacitor gates are polysilicon. Metal-to-polysilicon contacts are made to connect the metal word lines to the polysilicon gates of the access transistors and to connect the metal bias lines to the capacitor gates.