| 摘要 |
PURPOSE:To improve electrostatic breakdown withstand voltage by a method wherein an insulation isolation diffused layer (collector region) of one conductivity type is not intersected with a metallic wiring which connects a base. CONSTITUTION:An N<-> type epitaxial layer 202 is formed on a substrate 201. An island region is divided by the insulation diffused layer 203, thus forming the base region 202' of a transistor. A P type emitter region 204 and a base contact 205 are formed on the surface of the base region 202'. A collector region 206 is formed on the upper surface of the insulation diffused layer 203 by diffusion. A point largely different from that of a conventional device is that the collector region 206 is not formed over the entire surface of the insulation isolation diffused layer 203 and severed at the part of intersection with a base wiring 209, and that collector diffusion is not performed in the neighborhood of wiring passage, resulting in the thick formation of the insulation film 208 at this part. Since collector diffusion is not performed at the part of intersection, the oxide film formed on the upper surface does not become thin, and there is no possibility of electrostatic breakdown at this part. |
