发明名称 SILICON WAFER BONDING DEVICE
摘要 PURPOSE:To readily bond a wafer through a wax film of uniform thickness to a bonding plate without influence of temperature gradient by providing heaters adjacent to the plate and a presser. CONSTITUTION:The operation of an apparatus having upper and lower aluminum cast heaters 3, 3' is executed by high and low temperature pressurizing stations. In the high temperature station, the entire wafer 5-wax-bonding plate 4 are heated by upper and lower heaters to approx. 190 deg.C and pressurized by the pressure of approx. 500-1,000g/cm<2> per unit area of the wafer. After the high temperature station is finished, the low temperature station is then heated to 90 deg.c by upper and lower heaters and pressurized under the same pressure, and wax is held in advance in this state until it is fixed. The plate 4 in which the wax solidified in advance is held in an accurate state in this manner is cooled by normal means to completely solidify the wax.
申请公布号 JPS6290944(A) 申请公布日期 1987.04.25
申请号 JP19850231756 申请日期 1985.10.17
申请人 TOSHIBA CERAMICS CO LTD 发明人 ARAKI TAKASHI;SATO KAZUO;KINOSHITA MASAHARU
分类号 B24B37/04;B24B37/30;H01L21/304;H01L21/67;H01L21/68;H01L21/683 主分类号 B24B37/04
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