| 摘要 |
The high voltage field effect transistor has a drive circuit for pulse width modulation, which includes a small transformer coupled to the gate and source with a diode in series at the gate, so that a very short on-drive pulse charges the gate capacitance, and the charge is held by the diode. Another FET has its output connected between the gate and source of the high voltage FET, and its input coupled to another small transformer so that it is turned on for a short time by a very short off-drive pulse to discharge the gate capacitance and thus turn off the high voltage FET. A transformer drive circuit includes two one-shot devices connected to the pulse width modulator as leading and trailing edge detectors respectively, with their outputs connected via FET's to the on-drive and off-drive transformer primaries respectively, to provide pulses of 100-200 nanoseconds.
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