| 摘要 |
PURPOSE:To optimize a distribution of impurity concentration for obtaining photovoltaic elements of high efficiency by holding a first thin film of impurities in a vacuum, inert gas, a silicon compound in gas state or hydrogen atmosphere, after it is formed thicker than the optimum film thickness. CONSTITUTION:The substrate which is a glass plate 1 depositted a transparent conductive film 2 thereon is inserted into an a-Si film laminating device, in which a P-layer 4 thicker than the optimum value is laminated. The substrate is held in a vacuum or held with pouring inert gas, a silicon compound in gas state which is material gas or hydrogen while the temperature of the substrate is maintained at a constant value. Thus an effective film thickness of the P-layer 4 and an optimum distribution of impurities are controlled by quantity of impurity gas, holding time and the temperature of the substrate. The impurity concentration is determined to be, for example, B2H6/SiH4=500ppm-2vol% and the holding time, which depends on the lamination condition, is to be 5min-2hr. After that, I-layer and N-layer 6 are laminated to the optimum film thickness without controlling impurities. |
