| 摘要 |
<p>PURPOSE:To accelerate a read-out operation by providing a high resistance which absorbs the leakage current flowing to a common data line between the earth potential of a circuit and said common data line via a switch means that is turned on at a chip non-selection mode. CONSTITUTION:A switch MOSFETQ12 which receives a control signal ce and a high resistance R which flows a current of about muA, for example, are set in series between a common data line CD1 and the earth potential of a circuit. At the same time, a witch MOSFETQ13 is provided to the bias voltage VB to limit the level increment and to flow a current of high resistance R. This resistance R consists of a polysilicone resistance, and this resistance value is set at about 1MOMEGA because the potential of the line CD1 is about 2V at most in a chip non- selection mode. Both MOSFETQ12 and 13 are turned on in a chip non-selection mode to suppress the level increment due to the leakage currnt of the voltage VB as well as the line CD1.</p> |
