发明名称 PIZT OPTICAL GATE ARRAY
摘要 PURPOSE:To form a PLZT optical gate array of a desired size, and also to manufacture it at a low cost by providing a PLZT layer and an optical shutter electrode on a substrate consisting of other material than PLZT. CONSTITUTION:A transparent substrate 2, for instance, a quartz substrate is prepared, and on its one surface 2a, films of NiCr and Au are formed successively. Subsequently, a common electrode 3 ana 3 switching electrode 4 are formed from the films of NiCr and Au. Thereafter, on the surface on which the electrodes 3, 4 are formed, PLZT is vapor-deposited to a uniform thickness by means of high frequency spattering, and a thin film-like PLZT layer 5 is formed. In this way, a lot of optical gate parts 6 are constituted of a part of the PLZT layer 5 between the common electrode 3 and each switching electrode 4. In the end, when the switching electrode 4 is bonded to a driving circuit, and the common electrode is grounded, a PLZT optical gate array 1 can be operated. Since the PLZT optical gate array can be formed to a desired size, the deterioration of resolution and troublesomeness for the position adjustment of the array, etc. can be prevented.
申请公布号 JPS59104624(A) 申请公布日期 1984.06.16
申请号 JP19820214046 申请日期 1982.12.08
申请人 RICOH KK 发明人 SHIBAKUCHI TAKASHI
分类号 G02F1/05;G02F1/03;G02F1/055 主分类号 G02F1/05
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