| 摘要 |
PURPOSE:To prevent the stepwise disconnection of wirings at a stepped part in a semiconductor device and to improve the controllability of the thickness of a conductor film by increasing the thickness of the film, burying a resist in the recess of the film and removing by etching the resist. CONSTITUTION:A conductor film 1 is formed in a sufficient thickness on an interlayer insulating film 2. The recess of the film is buried by coating a resist to smoothen the surface. The resist and the film and partly removed by the same etching rate of plasma or sputter etching. In this manner, the equalized film 6 is obtained, thereby preventing the stepwise disconnection of the wirings at the stepped part. |
