| 摘要 |
The invention relates to a field-effect transistor with two-dimensional electron gas, known by the name of TEGFET. In a TEGFET, the two-dimensional electron gas forms near the heterojunction, inside the active layer, and electrical access thereto is through electrically resistant layers. The transistor according to the invention includes a semi-insulating substrate 13, a n<-> doped active layer 14 and a n<-> doped gate layer 15: the two-dimensional electron gas forms at the heterojunction 18 between these two layers 14, 15. To access it under low electrical resistance, two compartments 19, 20 of the same material as the active layer 14 but n<+> doped, are interposed between the active layer 14 and the gate layer 15: they are therefore in direct contact with the electron gas. Moreover, the two metallisations 21, 22 of source and drain penetrate through the surface layer(s) 15, 16 to the interior of the compartments 19, 20 and are also in direct contact with the electron gas. Application to transistors for microwave frequencies, of the order of 50 GHz. <IMAGE>
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