| 摘要 |
PURPOSE:To prevent the permeation of water and impurities into a polycrystalline semiconductor layer by a method wherein the polycrystalline semiconductor layer is selectively turned into a fused state by irradiating the layer with energy beams in the atmosphere of oxygen and, at the same time, an oxide film is formed. CONSTITUTION:Laser beams are made into a spotlight and irradiated the desired fusing part. At this time, the irradiation is performed in such a manner that oxygen gas is sprayed on the irradiation part or in the condition that the whole semiconductor device has been housed in the atmosphere of oxygen. At the irradiation part, phosphoric silicate films 4 are first fused and removed, then, conductive polycrystalline silicon layers 3 are fused and disconnected. The fused surfaces of the silicon layers are reacted to oxygen in the process that the surfaces are removed heat and silicon dioxide films 10 are formed. The silicon dioxide films 10 coat the fused surfaces. |
