| 摘要 |
PURPOSE:To improve integration and reliability by removing a level difference at a connecting hole by filling an opening of an insulating layer between a first and a second conductive layers with a third conductive layer. CONSTITUTION:An SiO2 film 2 on an Si substrate 3 is opened a window to form an N<+> layer 4 and a polysilicon 6 is grown over the whole surface of said film 2. Then a photoresist 7 is coated which becomes thicker only at the dent of the window. Incineration by O2 plasma is done utilizing the difference of the film thicknesses to leave only the thick part 7' in the dent. Following that, the exposed polysilicon is etched to be removed by gas of CF4 group thereby leaving the polysilicon 6 only in the window. For example, P is added to polysilicon filling the window to make it a conductor on which Al 1 is deposited, thereby bringing forth a coat having a good uniformity on the surface without a level difference. This constitution excludes defects of photograving process and prevents deterioration of yield, reliability and integration altogether. |
