| 摘要 |
PURPOSE:To reduce the weight of a vertical vapor-phase crystal growth apparatus for growing epitaxial layer on a substrate, and to enable the growth of crystal under low pressure, by using an infrared ray source to heat the reverse side of a substrate-holding susceptor from the outside of the reaction vessel. CONSTITUTION:A susceptor 2 supported by the rotary shaft 5 is placed in a vertical reaction vessel 1 made of transparent quartz, and a substrate 3 is placed on the susceptor. The reaction vessel 1 is surrounded by e.g. three infrared rag sources 4 arranged at regular intervals. The infrared ray source 4 is used for the purpose of heating the susceptor 2 by infrared radiation, and is composed of an infrared lamp 8 furnished with a parabola mirror 9 to focus the infrared radiation to the reverse face of the susceptor 2. To facilitate the incidence of the infrared radiation to the susceptor 2, the reaction vessel is furnished with a bulge 13 along the optical axis of the infrared ray source 4. A xenon lamp, a halogen lamp or an infrared lamp is used as the infrared ray source. |
