| 摘要 |
PURPOSE:To simplify the structure and to improve accuracy of an output voltage to the large extent, by connecting the collector and emitter of one transistor in a second current mirror, whose conducting type is reverse with respect to that of a first current mirror, to the collectors of first and second input transistors. CONSTITUTION:V4 is a constant voltage bias power source for first and second input transistors Q1 and Q2. The emitter area ratio of the first and second input transistors is X:1 (X>1). D3 and D4 are first and second diodes for generating DELTAVBE. The emitter area ratio of these diodes is X:1. By setting the area ratios of the transistors Q1 and Q2 and the diodes D3 and D4, the outputs accompanying arbitrary constants, which are proportional to the absolute values, are obtained. In an absolute temperature proportion circuit, only the dispersion in a current ratio is included as shown by the expressions. Therefore the accuracy of the output voltage is improved. |
