PROCESS AND APPARATUS FOR ION ETCHING OR FOR PLASMA C.V.D.

摘要

1. Process for plasma etching or for plasma chemical-vapour deposition in a receptacle in which a plasma is formed between two electrodes, characterized in that the plasma extends mainly between two or more electrodes which are arranged parallel to one another at a distance dependent on the discharge conditions and are covered with substrates and which are subjected to the same potential, and in that the receptacle surrounding the electrodes and/or auxiliary electrode surrounding these electrodes are subjected to the other potential.