| 摘要 |
PURPOSE:To attain stable holding of the vertical Bloch line pair of magnetic storage information by arranging a film pattern having distortion to a ferromagnetic substance having a stripe domain. CONSTITUTION:The film pattern 53 having distortion is arranged on the ferromagnetic substance film 51 having the stripe domain via a spacer film 52, the distortion of the pattern 53 is transmitted to a film 51 and the magnetic characteristic of the film 51 is changed locally by the diamagnetostriction effect. The magnetic wall is changed suddenly at the end of the pattern 53 by the local change of the magnetic wall energy due to the change in the magnetic characteristic, and the vertical Bloch line pair of magnetic storage information stabilized at a position where the magnetic wall energy is minimized is held stably at the end of the pattern 53. |
