| 摘要 |
PURPOSE:To detect all stored signal charge by detecting the displacement of the potential of a readout electrode of a selected picture element. CONSTITUTION:In a charge transfer element of charge injection type having plural picture elements formed on a semiconductor substrate, after the charge is stored in potential wells 3, 4, an address pulse is brought to H level, the charge is transferred to the potential well 4 beneath the readout electrode EC, a charge storage capacitor Cs is reset. Then, the reset pulse phires is brought to L level, and the surface potential is stored in the capacitor Cs. Then, the sensing pulse phis is brought to L level, the readout electrode EC is floated, an injection voltage phiinj is applied via a capacitor Cinj, and the charge stored in the potential well 4 is injected to the substrate 2. The sensing pulse phis is brought to H level, the surface potential is detected and its change is outputted. |
