<p>A photovoltaic cell comprising a region of n-type semiconductor material in intimate contact with a region of p-type semiconductor material, in which both regions are in contact with conducting electrodes. The n-type and p-type semiconductor materials have lattice parameters which differ from each other by a percentage equal or greater than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm2.</p>
