| 摘要 |
PURPOSE:To form an effective domain of magnetic bubble driving domain to provide uniform grid distortion in the direction of depth by ion-implanting on a crystal face formed beforehand on the crystal of a magnetic bubble material through a crystal film having orientation properties on the crystal face. CONSTITUTION:A crystal film 12 having orientation properties on the crystal face is formed on the principal face 2 of a magnetic bubble material crystal 1, and a mask 3 for arresting ion implantation is formed on it in desired pattern. By ion implantation on the magnetic bubble material crystal 1 through the crystal film 12, an ion 4-implanted area 5 having a pattern corresponding to the pattern of the ion implantation arresting mask 3 is formed. A domain from the principal face 2 of the area 5 to planned depth Da' is formed as a magnetic bubble driving domain 6 in which grid distortion is within the range between a planned lower limit value Sa and a planned upper limit value Sb. In a domain from the principal face 2 to the depth Dm' that roughly corresponds to acceleration energy of ion 4 before implantation, the distribution of grid distortion shows a nearly uniform value. |
