| 摘要 |
PURPOSE:To obtain the etching solution for silicon crystal evaluation having the selectivity of an etching for defects and the etching rate independent of the type of conduction and/or the density of impurities by a method wherein a mixed solution of one part by volume on the whole containing hydrofluoric acid, nitric acid and acetic acid, and specific volume of water is mixed. CONSTITUTION:Silicon crystal evaluation ethcing solution contains hydrofluoric acid (HF) of 0.03-0.13 part by volume, nitric acid of 0.26-0.61 part by volume (HNO2) and acetic acid (CH3COOH), and a mixed solution of one part by volume which makes one part by volume on the whole and water (H2O) of 0.3-0.7 part by volume are mixed. When such a silicon (Si) crystal evaluation etching solution as above-mentioned is used for a silicon substrate, as crystal defects are observed in every region, the correspondence between the electric characteristics of an element and the crystal defects can be recognized. Also, the time required for an etching is short as 30sec-1min and defects can also be observed with the etching amount of 1-2mum, thereby enabling to perform evaluation of the element formed part. |
