| 摘要 |
PURPOSE:To obtain a glass-sealed type semiconductor device which has small size and good heat sink characteristic by drawing a heat sink metal plate separately from the drawing layer of a lead terminal through the connecting section of a base and a cap or a base. CONSTITUTION:A heat sink metal plate 8 which extends externally is bonded via glass 9 to the upper surface of a ceramic base 7 of a flat plate, a semiconductor chip 2 is secured onto the metal plate 8, a lead terminal 3 connected to the chip 2 is superposed through the glass 5 on the plate 8, a ceramic cap 6 is covered to airtightly seal it with the glass 5. A wide heat sink metal plate 10 is drawn in the same direction as the terminal 3 under the drawing layer of the terminal 3. Or, the metal plate 11 is bent in ?-shape, both sides are sealed with glass 12 by passing the base vertically, and the chip 2 is secured to the center. The heat generation of the chip is transmitted to the metal plate in any case to be preferably dissipated, and a semiconductor device which can cope with high integration and high electric power can be obtained. |
