Laser processing of PSG, oxide and nitride via absorption optimized selective laser annealing.

摘要

A method for selectively heating an insulating layer on a semiconductor structure by a high energy transient radiation source to a temperature sufficient to cause reflow without any significant heating of the regions adjacent to or underlying the insulating layer. In one embodiment a laser tuned to the absorption wavelength of the insulating material is scanned over the surface of the semiconductor structure. In another embodiment an insulating layer and an underlying or adjacent semiconductor layer are concurrently heated by a laser tuned to an absorption wavelength common to both in order to maintain the integrity of the interface therebetween. In a further embodiment the depth of heating in an insulating layer is controlled by selecting an appropriate dwell time for a continuous wave laser and a pulse duration for a pulsed laser.