发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To contrive to prolong the lifetime without causing the deterioration of laser characteristics by depositing a mixture of a dielectric substance and an inactive element on the end surface of a cavity as an end surface protection film. CONSTITUTION:The protection film mixed with Al2O3 as the dielectric substance and Ar as the inactive element is attached on the end surface of a GaAs- GaAlAs series laser. That is, radii of atoms of GaAs respectively are 1.24Angstrom and 1.25Angstrom ; radii of atoms of Al, O, and Si the constituents of the protection films respectively are 1.43Angstrom , 0.61Angstrom , and 1.17Angstrom ; while the inactive gas Ar has a large atomic radius of 1.91Angstrom . The Ga and the As become difficult to move by the presence of atoms having such large atomic radii in the protection film.
申请公布号 JPS5992593(A) 申请公布日期 1984.05.28
申请号 JP19820202986 申请日期 1982.11.18
申请人 MATSUSHITA DENKI SANGYO KK 发明人 OKABE NAOKO;SHIMIZU HIROICHI;ITOU KUNIO
分类号 H01S5/00;H01S5/028 主分类号 H01S5/00
代理机构 代理人
主权项
地址