| 摘要 |
PURPOSE:To obtain the multi-axis mode semiconductor laser, an axial mode space thereof is narrow, which oscillates by a multi-axis mode, oscillating threshold currents thereof are the same extent as a normal method, yield thereof is excellent and resonator length thereof is long, by forming a first reflection plane to a light amplifying composite guide layer and forming a second reflection plane opposite to the first reflection plane to a second optical guide layer. CONSTITUTION:Beams are propagated in the active layer 3 of a mesa-shaped stripe 20 and the light amplifying composite guide layer consisting of a first guide layer 4 in the high section 100 of a buried layer 8, beams move to the second guide layer 5 approximately completely from the light amplifying composite guide layer in a boundary between the high section 100 and a low section 200, and beams are propagated in he second guide layer 5 in the low section 200. The active layer 3 in the high section 100 has amplification action to beams close to a 1.30mum wavelength by currents injected through a first electrode 11. A first cleavage plane 23 and a second cleavage plane 24 reflect partially beams each propagated in the active layer 4, the light amplifying composite guide layer consisting of the first guide layer 5 and a second guide layer 6 in the opposite direction. Laser oscillation using the full length of the mesa-shaped stripe 20 in the high section 100 and the low section 200 in the 1.3mum wavelength as resonator length is executed by these actions. |
