| 摘要 |
PURPOSE:To form a thin film pattern having high quality without deviation in the stage of superposing a long-sized substrate and a mask and forming continuously the thin film pattern on the substrate by heating by using the same material for the sdubstrate and the mask thereby making the coefft. of thermal expansion the same. CONSTITUTION:A long-sized substrate 1 and a mask 2 are superposed in an evacuated chamber, and are fed continuously into the 1st filming chamber 3 by matching the position of a sprocket 4 with the sprocket hole 1c of the substrate 1. The substrate and the mask are then heated with a heater 5 and a patterned film is formed thereon by a filming source 6. The mask 2 is wound around a roll in an intermediate chamber 7, whereby the 1st patterned film is obtd. The 2nd pattern is formed by the similar method in the 2nd filming chamber 8. The same material is used for the substrate 1 and the mask 2 in this stage to make the coefft. of thermal expansion the same, whereby the change rate by the effect of heating is made the same and the deviation between the substrate 1 and the mask 2 is eliminated from the start till the end of the filming. |
