| 摘要 |
In a process for producing MOS transistors having shallow source/drain zones (7, 8), self-aligning polysilicon contacts (3, 4 and 12) and short channel lengths, the source/drain zones (7, 8) are produced by outdiffusion from a structure which is composed of a doped polysilicon layer (3, 4) and which subsequently acts as contact connection. The gate electrodes (12), which are composed of polysilicon, are produced in such a way that they overlap the diffused peripheral areas (17, 18) of the source/drain zones (7, 8). The process is used to produce MOS and CMOS circuits in the sub- mu m range. <IMAGE>
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