| 摘要 |
PURPOSE:To increase the turn-OFF enabling current by dividing the current concentration in an emitter by dividing the emitter region of a gate side, thereby dispersing the current concentration at the gate turn-OFF time. CONSTITUTION:An n type emitter nE is divided into two parts 4x, 4y, an insulating film 10 is formed on a p type isolating region 9 therebetween, and a cathode 5a couples nE region parts 4x, 4y across the film 10. Since carrier is not injected in the region 9, the current concentration is completely isolated into two boundary region parts of the p type isolating regions 9 of two nE region parts 4x, 4y. In this manner, even if the width of the region 9 is of the degree of diffusing length of the carrier, the width of the current concentration region is increased into approx. 3L, thereby alleviating the current concentration. |
