发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To enable to apply the lowest voltage to a semiconductor substrate of an integrated circuit in which an analog circuit and a digital circuit are mixed by pure aluminum wirings without fail by contacting wirings for applying the lowest voltage by providing a dummy land at one side. CONSTITUTION:An n type dummy land 7 is formed by diffusing or ion implanting n type impurity on a p type semiconductor substrate 2. Wirings 4A are ohmically contacted with the substrate through a subcontacting window 6A of large area with the land 7 and aluminum wirings 4A, and connected to the emitter region E of an n-p-n type transistor 5A. In this manner, a diode D is formed between the substrate 2 and the land 7, and even if a resistor R is connected between the contacting regions 6D and 6A, the connection is interrupted by a diode D of floating state, and the variation in the voltage of the wirings 4A is not transmitted to the wirings 4D.
申请公布号 JPS5986253(A) 申请公布日期 1984.05.18
申请号 JP19820192951 申请日期 1982.11.02
申请人 FUJITSU KK 发明人 ISHIKAWA TAMOTSU;TANAKA HIROKAZU
分类号 H01L21/822;H01L21/3205;H01L23/50;H01L23/52;H01L27/04;H01L27/06 主分类号 H01L21/822
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